Title :
The effect of high temperature annealing on 1.55 μm strained GaInAs/AlGaInAs MQW lasers grown by MBE
Author :
Shimizu, H. ; Iwai, N. ; Mukaihara, T. ; Nishikata, K. ; Kasukawa, A.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
The effect of high temperature annealing on the characteristics in 1.55 μm strained GaInAs/AlGaInAs MQW lasers were investigated for the first time. It was experimentally found that the threshold current densities didn´t change by thermal annealing even at 800°C, although the PL intensities were improved. We can say that the crystalline quality of GaInAs/AlGaInAs MQW doesn´t degrade by thermal annealing even at 800°C. The MQW structure disappeared completely by Zn diffusion at 500°C. High performance narrow stripe laser can be fabricated by disordering of MQW using Zn diffusion technique
Keywords :
III-V semiconductors; aluminium compounds; annealing; diffusion; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; 1.55 micron; 500 C; 800 C; GaInAs-AlGaInAs:Zn; MBE growth; Zn diffusion; crystalline quality; disordering; high temperature annealing; narrow stripe laser; photoluminescence intensity; strained GaInAs/AlGaInAs MQW laser; threshold current density; Analytical models; Gallium arsenide; Molecular beam epitaxial growth; Pattern analysis; Quantum well devices; Quantum well lasers; Simulated annealing; Substrates; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600074
