Title :
InP solar cell improvement by inverse delta-doping
Author :
Piprek, J. ; Böer, K.W.
Author_Institution :
Mater. Sci., Delaware Univ., Newark, DE, USA
Abstract :
Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p+ n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points
Keywords :
III-V semiconductors; carrier lifetime; electron-hole recombination; indium compounds; p-n junctions; semiconductor device models; semiconductor doping; solar cells; InP; efficiency; fill factor; homojunction solar cells; inverse delta-doping; junction leakage current; numerical modeling; open circuit voltage; p+n-InP solar cells; pn-junction; recombination center density; recombination loss mechanisms; thin undoped layer; Charge carrier lifetime; Charge carrier processes; Circuits; Doping; Gallium arsenide; Indium phosphide; Materials science and technology; Numerical models; Photovoltaic cells; Spontaneous emission;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520657
