InP solar cell improvement by inverse delta-doping

Author

Piprek, J. ; Böer, K.W.

Author_Institution

Mater. Sci., Delaware Univ., Newark, DE, USA

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1818

Abstract

Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p⁺n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points

Keywords

III-V semiconductors; carrier lifetime; electron-hole recombination; indium compounds; p-n junctions; semiconductor device models; semiconductor doping; solar cells; InP; efficiency; fill factor; homojunction solar cells; inverse delta-doping; junction leakage current; numerical modeling; open circuit voltage; p⁺n-InP solar cells; pn-junction; recombination center density; recombination loss mechanisms; thin undoped layer; Charge carrier lifetime; Charge carrier processes; Circuits; Doping; Gallium arsenide; Indium phosphide; Materials science and technology; Numerical models; Photovoltaic cells; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520657

Filename

520657