DocumentCode :
3002498
Title :
Exploring the limit of strain-induced performance gain in p- and n-SSDOI-MOSFETs
Author :
Bufler, F.M.
Author_Institution :
Inst. fur Integrierte Syst., Zurich, Switzerland
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
601
Lastpage :
604
Abstract :
We investigate by Monte Carlo simulation the strain-induced performance enhancement in n- and p-type SSDOI-MOSFETs under scaling to LG=10 nm with constant Ioff-obtained via adjusting the Si film thickness tSi. The improvement in the order of 30% at 50 and 25 nm strongly decreases at 10 nm involving even an absolute decrease of Ion.
Keywords :
MOSFET; Monte Carlo methods; nanoelectronics; semiconductor device models; 10 nm; 25 nm; 50 nm; Monte Carlo simulation; Si; film thickness adjustment; n-SSDOI-MOSFET; p-SSDOI-MOSFET; strain-induced performance enhancement; Anisotropic magnetoresistance; MOSFETs; Performance gain; Photonic band gap; Quantum mechanics; Semiconductor films; Silicon; Tensile strain; Threshold voltage; Uniaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419233
Filename :
1419233
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3002498
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