A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs

Author

Palestri, P. ; Esseni, D. ; Eminente, S. ; Fiegna, C. ; Sangiorgi, E. ; Selmi, L.

Author_Institution

DIEGM, Udine Univ., Italy

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

605

Lastpage

608

Abstract

In this paper, a Monte-Carlo simulator, including quantum corrections to the potential and an improved physically based model for surface roughness scattering is used to study the electronic transport in double gate (DG) SOI MOSFETs with L_G down to 14nm. Our results demonstrate that, for the explored L_G values, scattering still controls the ON current (I_DS), which for L_G = 25nm is overestimated by about a factor of 2 by a ballistic model. By monitoring the electrons back-scattered at the source, we discuss the role of the scattering in different parts of the device.

Keywords

MOSFET; Monte Carlo methods; electron backscattering; electron transport theory; semiconductor device models; silicon-on-insulator; surface roughness; 14 nm; 25 nm; Monte-Carlo simulator; Si; ballistic model; deca-nanometer MOSFET; double gate SOI MOSFET; electron back-scattering; electronic transport; physically based model; quantum corrections; surface roughness scattering; Electrons; Intrusion detection; MOSFETs; Monitoring; Particle scattering; Phonons; Quantization; Rough surfaces; Strontium; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419234

Filename

1419234