DocumentCode :
3002522
Title :
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs
Author :
Palestri, P. ; Esseni, D. ; Eminente, S. ; Fiegna, C. ; Sangiorgi, E. ; Selmi, L.
Author_Institution :
DIEGM, Udine Univ., Italy
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
605
Lastpage :
608
Abstract :
In this paper, a Monte-Carlo simulator, including quantum corrections to the potential and an improved physically based model for surface roughness scattering is used to study the electronic transport in double gate (DG) SOI MOSFETs with LG down to 14nm. Our results demonstrate that, for the explored LG values, scattering still controls the ON current (IDS), which for LG = 25nm is overestimated by about a factor of 2 by a ballistic model. By monitoring the electrons back-scattered at the source, we discuss the role of the scattering in different parts of the device.
Keywords :
MOSFET; Monte Carlo methods; electron backscattering; electron transport theory; semiconductor device models; silicon-on-insulator; surface roughness; 14 nm; 25 nm; Monte-Carlo simulator; Si; ballistic model; deca-nanometer MOSFET; double gate SOI MOSFET; electron back-scattering; electronic transport; physically based model; quantum corrections; surface roughness scattering; Electrons; Intrusion detection; MOSFETs; Monitoring; Particle scattering; Phonons; Quantization; Rough surfaces; Strontium; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419234
Filename :
1419234
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3002522
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