DocumentCode :
3002559
Title :
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: a Monte Carlo study
Author :
Eminente, S. ; Esseni, D. ; Palestri, P. ; Fiegna, C. ; Selmi, L. ; Sangiorgi, E.
Author_Institution :
ARCES Center, Bologna, Italy
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
609
Lastpage :
612
Abstract :
In this work we have simulated the ION and its ballistic limit IBL of MOSFETs designed according to the 2003 roadmap down to the 45 nm node, by using a full-band, self-consistent Monte Carlo simulator with quantum mechanical corrections. Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for LG below approximately 50 nm and contribute most part of the ION improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; nanotechnology; semiconductor device models; silicon-on-insulator; 45 nm; DG SOI MOSFET; Si; ballistic limit; enhanced ballisticity; full-band self-consistent Monte Carlo simulator; low channel doping; nano-MOSFET; quantum mechanical corrections; quasiballistic transport; transversal electric field; Analytical models; Ballistic transport; Doping; Electrodes; Light scattering; MOSFETs; Monte Carlo methods; Particle scattering; Phonons; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419235
Filename :
1419235
Link To Document :
بازگشت