• DocumentCode
    3002618
  • Title

    A threshold pulse width for electromigration under pulsed stress conditions

  • Author

    Noguchi, T. ; Hatanaka, K. ; Maeguchi, K.

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • fYear
    1989
  • fDate
    12-13 Jun 1989
  • Firstpage
    183
  • Lastpage
    189
  • Abstract
    Pulsed-current-induced electromigration failure was studied under various repetition frequencies and current densities. Self-joule-heating of the conductors during stressing was monitored directly by detecting the infrared intensity emitted from the conductor. It was found that there is a critical pulse width for electromigration under pulsed stress conditions which depend on the peak current density and substrate temperature. This fact suggests that a continuous force is needed to cause Al ions to migrate. When a pulse width is sufficiently short, Al ions cannot move and settle in new unstable sites
  • Keywords
    aluminium alloys; copper alloys; electromigration; failure analysis; infrared imaging; metallisation; silicon alloys; Al ions; AlSiCu metallisation; current densities; electromigration; failure analysis; infrared intensity; ion migration; pulsed stress conditions; repetition frequencies; self-joule heating; substrate temperature; threshold pulse width; Condition monitoring; Conductors; Current density; Electromigration; Frequency; Infrared detectors; Infrared surveillance; Space vector pulse width modulation; Stress; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1989.78021
  • Filename
    78021