DocumentCode :
3002618
Title :
A threshold pulse width for electromigration under pulsed stress conditions
Author :
Noguchi, T. ; Hatanaka, K. ; Maeguchi, K.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fYear :
1989
fDate :
12-13 Jun 1989
Firstpage :
183
Lastpage :
189
Abstract :
Pulsed-current-induced electromigration failure was studied under various repetition frequencies and current densities. Self-joule-heating of the conductors during stressing was monitored directly by detecting the infrared intensity emitted from the conductor. It was found that there is a critical pulse width for electromigration under pulsed stress conditions which depend on the peak current density and substrate temperature. This fact suggests that a continuous force is needed to cause Al ions to migrate. When a pulse width is sufficiently short, Al ions cannot move and settle in new unstable sites
Keywords :
aluminium alloys; copper alloys; electromigration; failure analysis; infrared imaging; metallisation; silicon alloys; Al ions; AlSiCu metallisation; current densities; electromigration; failure analysis; infrared intensity; ion migration; pulsed stress conditions; repetition frequencies; self-joule heating; substrate temperature; threshold pulse width; Condition monitoring; Conductors; Current density; Electromigration; Frequency; Infrared detectors; Infrared surveillance; Space vector pulse width modulation; Stress; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
Type :
conf
DOI :
10.1109/VMIC.1989.78021
Filename :
78021
Link To Document :
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