Title :
Sub 30 nm multi-bridge-channel MOSFET (MBCFET) with metal gate electrode for ultra high performance application
Author :
Yoon, Eun-Jung ; Lee, Sung-Young ; Kim, Sung-Min ; Kim, Min-Sang ; Kim, Sung Hwan ; Ming, Li ; Suk, Sungdae ; Yeo, Kyounghawn ; Oh, Chang Woo ; Choe, Jung-Dong ; Choi, Donguk ; Kim, Dong-Won ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-II
Author_Institution :
Semicond. R&D Center, Samsung Electron., Yongin, South Korea
Abstract :
We have successfully fabricated sub 30nm N+ poly and TiN gate MBCFET (multi-bridge-channel field effect transistor) both on SOI wafers and bulk-Si wafers. Using TiN metal gate and 20nm multi bridge channels, we achieved the drive current of 2.3mA/μm that is the largest drive current ever reported for pMOSFETs with excellent subthreshold swing of 75mV/dec, and drain induce barrier lowering (DIBL) of 36mV/V. Large Ion/Ioff ratio and excellent threshold voltage (Vt) distribution were obtained using TiN metal gate to eliminate channel ion implantation minimizing the mobility degradation and dopant fluctuation.
Keywords :
MOSFET; carrier mobility; ion implantation; nanoelectronics; silicon-on-insulator; titanium compounds; 20 nm; N+ poly MBCFET; SOI wafers; Si; TiN; TiN gate MBCFET; TiN metal gate; bulk-Si wafers; channel ion implantation; dopant fluctuation; drain induce barrier lowering; drive current; metal gate electrode; mobility degradation; multibridge-channel MOSFET; multibridge-channel field effect transistor; pMOSFET; threshold voltage distribution; ultra high performance application; Bridge circuits; Degradation; Drives; Electrodes; FETs; Fluctuations; Ion implantation; MOSFET circuits; Threshold voltage; Tin;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419244
