DocumentCode :
3002840
Title :
Research on the Characteristics of Compound Cavity Semiconductor Laser with Narrow Linewidth
Author :
Li, Weizhong ; Xu, Zhihui ; Lv, Hao
Author_Institution :
Deptment of Phys., Xiaogan Univ., Xiaogan, China
fYear :
2012
fDate :
21-23 May 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, a new type compound cavity semiconductor laser is designed and the several important parameters, such as threshold gain, coupling efficiency, surface reflectivity and composite cavity length, are discussed. Research results indicate the narrow linewidth semiconductor laser compound cavity can be achieved narrow linewidth 10-4.
Keywords :
laser beams; laser cavity resonators; optical design techniques; reflectivity; semiconductor lasers; spectral line narrowing; composite cavity length; compound cavity semiconductor laser; coupling efficiency; narrow linewidth; surface reflectivity; threshold gain; Cavity resonators; Fiber gratings; Fiber lasers; Laser feedback; Laser modes; Reflectivity; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
ISSN :
2156-8464
Print_ISBN :
978-1-4577-0909-8
Type :
conf
DOI :
10.1109/SOPO.2012.6270932
Filename :
6270932
Link To Document :
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