Title :
Molybdenum gate HfO2 CMOS FinFET technology
Author :
Ha, Daewon ; Takeuchi, H. ; Choi, Y.-K. ; King, T.J. ; Bai, W.P. ; Kwong, D.L. ; Agarwal, Abhishek ; Ameen, M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
CMOS FinFETs with molybdenum gate and HfO2 gate-dielectric are reported. By tuning the gate work function via nitrogen implantation and employing a narrow fin width, low values of threshold voltage (0.28/-0.17 V) and sub-threshold swing (67.5/62.5 mV/dec) were achieved. The use of HfO2 rather than SiO2 as the gate dielectric reduces the gate leakage current density by several orders of magnitude, for EOT in the range 1.75-1.95 nm. The observed weak temperature dependence for both electron and hole mobilities (μeff ∼ T-0.95) is ascribed to soft phonon scattering.
Keywords :
CMOS integrated circuits; dielectric thin films; electron mobility; field effect transistors; hafnium compounds; hole mobility; molybdenum; nanotechnology; nitrogen; work function; 1.75 to 1.95 nm; CMOS FinFET technology; HfO2; HfO2 gate dielectric; Mo; N; electron mobility; gate leakage current density; gate work function; hole mobility; molybdenum gate; narrow fin width; nitrogen implantation; soft phonon scattering; sub-threshold swing; threshold voltage; weak temperature dependence; Charge carrier processes; Dielectrics; Electron mobility; FinFETs; Hafnium oxide; Leakage current; Nitrogen; Phonons; Temperature dependence; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419248
