Title :
A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm2 SRAM cell
Author :
Bai, P. ; Auth, C. ; Balakrishnan, S. ; Bost, M. ; Brain, R. ; Chikarmane, V. ; Heussner, R. ; Hussein, M. ; Hwang, J. ; Ingerly, D. ; James, R. ; Jeong, I. ; Kenyon, C. ; Lee, E. ; Lee, S.-H. ; Lindert, N. ; Liu, M. ; Ma, Z. ; Marieb, T. ; Murthy, A. ; N
Author_Institution :
Portland Technol. Dev., Intel Corp., Portland, OR, USA
Abstract :
A 65nm generation logic technology with 1.2nm physical gate oxide, 35nm gate length, enhanced channel strain, NiSi, 8 layers of Cu interconnect, and low-k ILD for dense high performance logic is presented. Transistor gate length is scaled down to 35nm while not scaling the gate oxide as a means to improve performance and reduce power. Increased NMOS and PMOS drive currents are achieved by enhanced channel strain and junction engineering. 193nm lithography along with APSM mask technology is used on critical layers to provide aggressive design rules and a 6-T SRAM cell size of 0.57μm2. Process yield, performance and reliability are demonstrated on a 70 Mbit SRAM test vehicle with >0.5 billion transistors.
Keywords :
SRAM chips; copper; integrated circuit interconnections; integrated circuit reliability; integrated circuit yield; integrated logic circuits; masks; nanotechnology; nickel compounds; ultraviolet lithography; 1.2 nm; 193 nm; 193nm lithography; 35 nm; 65 nm; 70 Mbit; APSM mask technology; Cu; Cu interconnect layers; NMOS drive current; NiSi; PMOS drive current; SRAM cell; enhanced channel strain; junction engineering; logic technology; low-k ILD; physical gate oxide; power reduction; process yield; transistor gate length; Automotive engineering; Capacitive sensors; Design engineering; Lithography; Logic; MOS devices; Power engineering and energy; Random access memory; Reliability engineering; Testing;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419253