• DocumentCode
    3003091
  • Title

    Ground State Lasing at 1.34 μm from InAs Quantum Dots Grown on GaAs Substrate by Antimony-Mediated Metal Organic Chemical Vapor Deposition

  • Author

    Guimard, D. ; Ishida, M. ; Nishioka, M. ; Tsukamoto, S. ; Hatori, N. ; Sudo, H. ; Yamamoto, T. ; Nakata, Y. ; Ebe, H. ; Sugawara, M. ; Arakawa, Y.

  • Author_Institution
    Univ. of Tokyo, Tokyo
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ground state lasing above 1.30 mum (1.34 mum) was obtained for the first time from InAs quantum dots grown on GaAs substrate by metal organic chemical vapor deposition.
  • Keywords
    III-V semiconductors; MOCVD; ground states; indium compounds; quantum dot lasers; GaAs; InAs; antimony-mediated metal organic chemical vapor deposition; ground state lasing; quantum dots; wavelength 1.34 mum; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Laser stability; Organic chemicals; Quantum dot lasers; Quantum dots; Quantum mechanics; Stationary state; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452487
  • Filename
    4452487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003091