Title :
Ground State Lasing at 1.34 μm from InAs Quantum Dots Grown on GaAs Substrate by Antimony-Mediated Metal Organic Chemical Vapor Deposition
Author :
Guimard, D. ; Ishida, M. ; Nishioka, M. ; Tsukamoto, S. ; Hatori, N. ; Sudo, H. ; Yamamoto, T. ; Nakata, Y. ; Ebe, H. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
Ground state lasing above 1.30 mum (1.34 mum) was obtained for the first time from InAs quantum dots grown on GaAs substrate by metal organic chemical vapor deposition.
Keywords :
III-V semiconductors; MOCVD; ground states; indium compounds; quantum dot lasers; GaAs; InAs; antimony-mediated metal organic chemical vapor deposition; ground state lasing; quantum dots; wavelength 1.34 mum; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Laser stability; Organic chemicals; Quantum dot lasers; Quantum dots; Quantum mechanics; Stationary state; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452487
