• DocumentCode
    3003152
  • Title

    InP/AlGaInP on GaAs Quantum Dot Lasers

  • Author

    Smowton, P.M. ; Al-Ghamdi, M. ; Krysa, A.B.

  • Author_Institution
    Cardiff Univ., Cardiff
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    MOVPE grown InP Q-dot lasers have low 300 K threshold current density (195 Acm-2 for 2000 mum long device) and T0=105 K (10-85degC) for 725-740 nm emission. Homogenous broadening appears to be more pronounced than in InGaAs Q-dots.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; spectral line broadening; InP-AlGaInP-GaAs; MOVPE; homogenous broadening; quantum dot lasers; temperature 10 degC to 85 degC; temperature 105 K; threshold current density; wavelength 725 nm to 740 nm; Absorption; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser modes; Quantum dot lasers; Temperature dependence; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452490
  • Filename
    4452490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003152