DocumentCode :
3003192
Title :
Carbon nanotubes for interconnect applications
Author :
Kreup, F. ; Graham, Andrew P. ; Liebau, Maik ; Duesberg, Georg S. ; Seidel, Robert ; Unger, Eugen
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
683
Lastpage :
686
Abstract :
We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5·108 A/cm2 and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.
Keywords :
carbon nanotubes; current density; integrated circuit interconnections; lithography; 20 nm; 7.8 kohm; carbon nanotubes; lithographically defined locations; vertical interconnect; Atomic layer deposition; Carbon nanotubes; Conductivity; Contact resistance; Copper; Current density; Electron tubes; Filling; Semiconductivity; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419261
Filename :
1419261
Link To Document :
بازگشت