Pseudo-linear Automatic Gain Control system based on Nanoscale Field Effect Diode and SOI-MOSFET

Author

Jazaeri, Farzan ; Soleimani-Amiri, S. ; Ebrahimi, B. ; Forouzandeh, Bahjat ; Ahmadi, H.-R. ; Raissi, Farshid

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran

fYear

2008

fDate

20-22 Dec. 2008

Abstract

The use of field effect diode (FED) together with double gate (DG) silicon on insulator (SOI) MOSFET for implementing variable gain amplifier (VGA) in automatic gain control (AGC) systems are investigated in this paper. These VGA circuits show better characteristics in terms of power and bandwidth compared with MOSFET-VGA. Using the FED and DG SOI-MOSFET devices, leads to more flexibility in terms of better gain control, performance improvement, and power consumption reduction.

Keywords

MOSFET; amplifiers; automatic gain control; field effect devices; nanoelectronics; semiconductor diodes; silicon-on-insulator; SOI-MOSFET; nanoscale field effect diode; pseudo-linear automatic gain control system; silicon on insulator; variable gain amplifier; CMOS technology; Circuits; Control systems; Diodes; Frequency response; Gain control; MOSFETs; Silicon on insulator technology; Surface resistance; Voltage control; AGC; DG SOIMOSFET; Field Effect Diode; Low-power systems; VGA;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Test Workshop, 2008. IDT 2008. 3rd International

Conference_Location

Monastir

Print_ISBN

978-1-4244-3479-4

Type

conf

DOI

10.1109/IDT.2008.4802487

Filename

4802487