Title :
High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors
Author :
Huo, X. ; Zhang, M. ; Chan, Philip C.H. ; Liang, Q. ; Tang, Z.K.
Author_Institution :
Dept. of EEE, Hong Kong Univ. of Sci. & Technol., China
Abstract :
High frequency S parameters characterization up to 10 GHz for back-gate carbon nanotube field-effect transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.
Keywords :
S-parameters; carbon nanotubes; field effect transistors; S parameters; carbon nanotube; field-effect transistors; lumped element model; CNTFETs; Calibration; Chemical elements; FETs; Frequency measurement; Nanotubes; Scanning electron microscopy; Scattering parameters; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419263
