TiN-encapsulized copper interconnects for ULSI applications

Author

Hoshino, K. ; Yagi, H. ; Tsuchikawa, H.

Author_Institution

Fujitsu Ltd., Kawasaki, Japan

fYear

1989

fDate

12-13 Jun 1989

Firstpage

226

Lastpage

232

Abstract

TiN-encapsulized Cu interconnects were developed for ultra-large-scale integration (ULSI) by nitriding the Cu-10%Ti alloy. The 500-nm-thick Cu-Ti alloy layer was separated into an upper TiN layer and a lower Cu layer after nitriding at 800°C. The interconnects had a higher oxidation resistance than Cu interconnects, and their resistivity was as low. The electromigration lifetime of the new interconnects was two orders of magnitude larger than that of pure Cu interconnects

Keywords

VLSI; copper; electromigration; integrated circuit technology; metallisation; titanium compounds; 500 nm; 800 C; Cu interconnects; Cu-Ti alloy layer; TiN diffusion barrier; TiN-Cu; ULSI; VLSI; electromigration lifetime; encapsulated Cu metal; multilevel interconnection; nitriding; oxidation resistance; resistivity; ultra-large-scale integration; Aluminum; Conductivity; Copper alloys; Electromigration; Oxidation; Scanning electron microscopy; Surface resistance; Temperature; Tin; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1989.78025

Filename

78025

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003266