• DocumentCode
    3003278
  • Title

    Near Field Optical Spectroscopy Studies of Carrier Localization in AlxGa1-xN Alloys

  • Author

    Capek, P. ; Jha, Nilotpal ; Zhou, Liang ; Dierolf, V.

  • Author_Institution
    Lehigh Univ., Bethlehem
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Using UV-near-field optical spectroscopy and AlGaN layers that exhibit a strong, red- shifted emission band, we demonstrate the existence of different localization regions that can be excited selectively with excitation below the bandgap.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; near-field scanning optical microscopy; red shift; ultraviolet spectroscopy; UV-near-field optical spectroscopy; bandgap excitation; carrier localization; red-shifted emission band; Electron optics; Fiber lasers; Laser excitation; Laser modes; Optical sensors; Photonic band gap; Plasma measurements; Spatial resolution; Spectroscopy; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452498
  • Filename
    4452498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003278