Title :
Technology, test and application of stack photoresistor colour sensors
Author :
Otto, T. ; Ruan, G. ; Fritzsch, U. ; Radehaus, C. ; Gessner, T.
Author_Institution :
Dept. of Electrotech. & Informationtech., Univ. of Technol., Chemnitz, Germany
Abstract :
Three kinds of stack arrangement photoresistor colour sensors are developed. The photoresistor are based on an amorphous hydrogenated silicon (a-Si:H) layer. Technology, test results of main performance and some application are given
Keywords :
amorphous semiconductors; colour; elemental semiconductors; hydrogen; photodetectors; photoresistors; resistors; silicon; Si:H; amorphous hydrogenated silicon; application; stack photoresistor colour sensor; technology; test; Amorphous materials; Chemical technology; Electromagnetic radiation; Electromagnetic wave absorption; Liquids; Semiconductor diodes; Sensor phenomena and characterization; Silicon; Temperature dependence; Testing;
Conference_Titel :
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3583-X
DOI :
10.1109/ISCAS.1997.612896
