مرکز منطقه ای اطلاع رساني علوم و فناوري - MOCVD Epitaxy and Optical Properties of Self-Assembled InGaN Quantum Dots via Stranski-Kastranow Growth Mode Emitting at 520-nm

DocumentCode :

3003286

Title :

MOCVD Epitaxy and Optical Properties of Self-Assembled InGaN Quantum Dots via Stranski-Kastranow Growth Mode Emitting at 520-nm

Author :

Ee, Yik-Khoon ; Arif, Ronald A. ; Jamil, Muhammad ; Tansu, Nelson

Author_Institution :

Lehigh Univ., Bethlehem

fYear :

2007

fDate :

6-11 May 2007

Firstpage :

Lastpage :

Abstract :

Self-assembled In_0.35Ga_0.65N quantum dots emitting at lambda~510-520 nm were realized by metal organic chemical vapor deposition via Stranski-Kastranow growth mode, with quantum dots density of 4 times 10⁹ cm^-2.

Keywords :

III-V semiconductors; MOCVD; gallium compounds; indium compounds; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; In_0.35Ga_0.65N; MOCVD epitaxial growth; Stranski-Kastranow growth mode; metal organic chemical vapor deposition; optical properties; quantum dots density; self-assembled quantum dots; wavelength 520 nm; Atomic layer deposition; Capacitive sensors; Epitaxial growth; Gallium nitride; Light emitting diodes; MOCVD; Nanostructures; Quantum dots; Self-assembly; Stimulated emission;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Lasers and Electro-Optics, 2007. CLEO 2007. Conference on

Conference_Location :

Baltimore, MD

Print_ISBN :

978-1-55752-834-6

Type :

conf

DOI :

10.1109/CLEO.2007.4452499

Filename :

4452499

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3003286