• DocumentCode
    3003286
  • Title

    MOCVD Epitaxy and Optical Properties of Self-Assembled InGaN Quantum Dots via Stranski-Kastranow Growth Mode Emitting at 520-nm

  • Author

    Ee, Yik-Khoon ; Arif, Ronald A. ; Jamil, Muhammad ; Tansu, Nelson

  • Author_Institution
    Lehigh Univ., Bethlehem
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Self-assembled In0.35Ga0.65N quantum dots emitting at lambda~510-520 nm were realized by metal organic chemical vapor deposition via Stranski-Kastranow growth mode, with quantum dots density of 4 times 109 cm-2.
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; indium compounds; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; In0.35Ga0.65N; MOCVD epitaxial growth; Stranski-Kastranow growth mode; metal organic chemical vapor deposition; optical properties; quantum dots density; self-assembled quantum dots; wavelength 520 nm; Atomic layer deposition; Capacitive sensors; Epitaxial growth; Gallium nitride; Light emitting diodes; MOCVD; Nanostructures; Quantum dots; Self-assembly; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452499
  • Filename
    4452499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003286