Title :
Modulation of drain current by redox-active molecules incorporated in Si MOSFETs
Author :
Gowda, Srivardhan ; Mathur, Guru ; Li, Qiliang ; Surthi, Shyam ; Zhao, Qian ; Lindsey, Jonathan S. ; Bocian, David F. ; Misra, Veena
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Redox-active molecular monolayers were incorporated in MOSFETs to modulate the device characteristics. The discrete molecular states were manifested in the drain current characteristics indicating the presence of distinct energy levels at room temperature.
Keywords :
MOSFET; molecular electronics; MOSFET; discrete molecular states; drain current; molecular monolayers; redox-active molecules; CMOS technology; Chemical technology; Chemistry; Electrons; Energy states; Low voltage; MOSFETs; Oxidation; Performance analysis; Substrates;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419267
