DocumentCode
3003320
Title
Modulation of drain current by redox-active molecules incorporated in Si MOSFETs
Author
Gowda, Srivardhan ; Mathur, Guru ; Li, Qiliang ; Surthi, Shyam ; Zhao, Qian ; Lindsey, Jonathan S. ; Bocian, David F. ; Misra, Veena
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
707
Lastpage
710
Abstract
Redox-active molecular monolayers were incorporated in MOSFETs to modulate the device characteristics. The discrete molecular states were manifested in the drain current characteristics indicating the presence of distinct energy levels at room temperature.
Keywords
MOSFET; molecular electronics; MOSFET; discrete molecular states; drain current; molecular monolayers; redox-active molecules; CMOS technology; Chemical technology; Chemistry; Electrons; Energy states; Low voltage; MOSFETs; Oxidation; Performance analysis; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419267
Filename
1419267
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