Title :
Model for dielectric breakdown mechanism of HfAlOx/SiO2 stacked gate dielectrics dominated by the generated subordinate carrier injection
Author :
Okada, Kenji ; Mizubayashi, Wataru ; Yasuda, Naoki ; Satake, Hideki ; Ota, Hiroyuki ; Kadoshima, Masaru ; Tominaga, Koji ; Ogawa, Anto ; Iwamoto, Kunihiko ; Horikawa, Tsuyoshi ; Nabatame, Toshihide ; Toriumi, Akira
Author_Institution :
MIRAI-ASET, Ibaraki, Japan
Abstract :
The dielectric breakdown mechanism of HfAlOx/SiO2 stacked gate dielectrics has been studied. Under the positive gate stress, validity of the anode hole injection model has been experimentally confirmed for the first time, while the cathode electron injection model is valid under the negative gate stress. Consolidating these mechanisms, the generated subordinate carrier injection (GSCI) model has been proposed for gate dielectrics including the conventional SiO2.
Keywords :
dielectric thin films; electric breakdown; hafnium compounds; insulating thin films; silicon compounds; HfAlO-SiO2; anode hole injection model; cathode electron injection model; dielectric breakdown mechanism; gate stress; generated subordinate carrier injection; stacked gate dielectrics; Cathodes; Charge carrier processes; Dielectric breakdown; Dielectric measurements; Electron traps; High K dielectric materials; High-K gate dielectrics; Solids; Stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419272
