Title :
Detrimental effects limiting the performances of InP HEMT-based OEICs
Author :
Berthelemot, C. ; Vigier, P. ; Dumas, J.M. ; Audren, P. ; Clei, A. ; Harmand, J.C.
Author_Institution :
Limoges Univ., France
Abstract :
An investigation has been carried out on InAlAs/InGaAs HEMTs dedicated to monolithic optoelectronic integrated circuits (OEICs) for receiver as well as transmitter applications. The monolithic integration on InP semi-insulating substrates can be penalized by several parasitic effects related to trapping/detrapping mechanisms originated in the substrate and/or buffer layers. These parasitics have been studied in three MBE-grown HEMT structures, one of them previously demonstrated as efficient in the reduction of the gate current induced by an impact ionisation mechanism developing in the InGaAs channel layer
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hole traps; impact ionisation; indium compounds; integrated optoelectronics; optical receivers; optical transmitters; InAlAs-InGaAs-InP; InAlAs/InGaAs HEMTs; InGaAs channel layer; InP; InP HEMT-based OEICs; InP semi-insulating substrates; MBE-grown HEMT structures; buffer layers; gate current; impact ionisation mechanism; monolithic optoelectronic integrated circuits; parasitic effects; performance limiting detrimental effects; receiver applications; substrate layer; transmitter applications; trapping/detrapping mechanisms; Application specific integrated circuits; Buffer layers; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Monolithic integrated circuits; Transmitters;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600079
