Title :
The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes
Author :
Kao, Chih-Chiang ; Lu, Tien-Chang ; Kao, Tsung-Ting ; Lin, Li-Fan ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0.52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; microcavities; GaN; dominant emission; high-Q; microcavity light emitting diodes; narrow linewidth; Apertures; Distributed Bragg reflectors; Etching; Gallium nitride; Indium tin oxide; Light emitting diodes; Power generation; Stimulated emission; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452514
