• DocumentCode
    3003572
  • Title

    Enhancement of Radiative Efficiency of Nitride-Based LEDs via Staggered InGaN Quantum Wells Emitting at 420-500 nm

  • Author

    Arif, Ronald A. ; Ee, Yik-Khoon ; Tansu, Nelson

  • Author_Institution
    Lehigh Univ., Bethlehem
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Polarization band engineering via staggered InGaN quantum well allows enhancement of radiative recombination rate, leading to significant improvement of luminescence and LEDs output power by > ~4 times.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; polarisation; quantum well lasers; wide band gap semiconductors; InGaN; LED; polarization band engineering; quantum wells; radiative efficiency enhancement; wavelength 420 nm to 500 nm; Biomedical optical imaging; Charge carrier processes; Gallium nitride; Light emitting diodes; Luminescence; Optical buffering; Radiative recombination; Stimulated emission; Temperature measurement; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452515
  • Filename
    4452515
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003572