Title :
Influence of the Quantum-confined Stark Effect of an InGaN/GaN Quantum Well on Its Coupling with Surface Plasmons for Emission Enhancement
Author :
Cheng-Yen Chen ; Dong-Ming Yeh
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
The effects of the screening of the quantum-confined Stark effect in an InGaN/GaN quantum well, in which the photoluminescence spectrum blue shifts with excited carrier density, on the surface plasmon coupling are identified and quantified.
Keywords :
III-V semiconductors; carrier density; gallium compounds; indium compounds; photoluminescence; quantum confined Stark effect; semiconductor quantum wells; spectral line shift; surface plasmons; wide band gap semiconductors; InGaN-GaN; InGaN/GaN quantum well; blue shifts; carrier density; emission enhancement; photoluminescence spectrum; quantum-confined Stark effect; surface plasmon coupling; Gallium nitride; Optical coupling; Optical surface waves; Photoluminescence; Plasmons; Quantum well devices; Resonance; Resonant frequency; Stark effect; Time measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452516
