Title :
GaInNAs Distributed Feedback (DFB) Laser Diode
Author :
Hashimoto, Jun-ichi ; Koyama, Kenji ; Ishizuka, Takashi ; Tsuji, Yukihiro ; Fujii, Kousuke ; Yamada, Takashi ; Fukuda, Chie ; Onishi, Yutaka ; Katsuyama, Tsukuru
Author_Institution :
Transm. Devices R & D Labs., Sumitomo Electr. Ind., Ltd., Osaka
Abstract :
First successful operation of a buried-ridge-type GaInNAs-DFB laser was realized. Under CW condition, it oscillated with a threshold current of 18 mA at 25degC, and it could oscillate up to 110degC with good I-L linearity and with SMSR > 40 dB.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; GaInNAs; buried-ridge-type DFB laser; current 18 mA; distributed feedback laser diode; temperature 25 C; Diode lasers; Distributed feedback devices; Etching; Gallium arsenide; Gratings; Laser feedback; Linearity; Optical materials; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452517
