Title :
Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation
Author :
Kolhatkar, J.S. ; Hoekstra, E. ; Salm, C. ; van der Wel, A.P. ; Klumperink, E.A.M. ; Schmitz, J. ; Wallinga, H.
Author_Institution :
Twente Univ., Enschede, Netherlands
Abstract :
The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; MOSFET; RTS noise; large-signal excitation; low-frequency noise; random telegraph signals; semiconductor device models; steady-state excitation; transient effect; Circuit noise; Circuit simulation; Low-frequency noise; MOSFETs; Predictive models; Radio frequency; Semiconductor device modeling; Steady-state; Telegraphy; Voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419283
