Title :
Comparison of cobalt and titanium silicides for SALICIDE process and shallow junction formation
Author :
Wei, Chih-Shih ; Raghavan, Gopal ; Dass, M. Lawrence A ; Frost, Mike ; Brat, Teodoro ; Fraser, David B.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
A comparison of TiSi2 and CoSi2 for the SALICIDE (self-aligned silicide) process is presented. Both TiSi2 and CoSi2 are formed by RTA in nitrogen. The comparison is based on the formation kinetics, film properties, process compatibilities, and electrical properties. The results are summarized in table form. Co silicide is found to be a better candidate for use in SALICIDE process for submicron devices because it has a less severe lateral gate-S/D encroachment problem, less sensitivity to oxygen, higher resistivity to dry/wet etch, less film stress, better sheet resistance control, less junction leakage, the capability to form low-resistance polycide, and shallow junctions. However, substrate cleaning must ensure no SiO2 on Si surfaces that are to be converted to CoSi2
Keywords :
VLSI; annealing; cobalt compounds; integrated circuit technology; metallisation; titanium compounds; CoSi2; N2 atmosphere; O2 sensitivity; RTA; SALICIDE process; SiO2 sensitivity; TiSi2; VLSI; electrical properties; etch resistance; film properties; formation kinetics; junction leakage; lateral encroachment; low-resistance polycide; multilevel interconnection; process compatibilities; self-aligned silicide; shallow junction formation; silicides; submicron devices; substrate cleaning; Cobalt; Conductivity; Dry etching; Kinetic theory; Nitrogen; Silicides; Stress control; Substrates; Titanium; Wet etching;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78027
