Title :
Resonant In-Well Pumping of GaSb-Based VECSELs Emitting in the 2.X μm Wavelength Regime
Author :
Schulz, N. ; Rattunde, M. ; Manz, C. ; Köhler, K. ; Wagner, J. ; Hopkins, J.-M. ; Burns, D.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg
Abstract :
We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.
Keywords :
III-V semiconductors; gallium compounds; optical pumping; surface emitting lasers; GaSb; GaSb-based VECSEL; barrier-pumped devices; epi-layer design; power conversion efficiency; resonant optical in-well pumping; wavelength 2.35 mum; Biomedical optical imaging; Gas lasers; Laser excitation; Optical pumping; Power generation; Power lasers; Pump lasers; Resonance; Stimulated emission; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452522
