Title :
A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles
Author :
Volkman, Steven K. ; Mattis, Brian A. ; Molesa, Steven E. ; Lee, Josephine B. ; de la Fuente Vornbrock, A. ; Bakhishev, Teymur ; Subramanian, Vivek
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
We report on a novel, air-stable, printable, transparent, NMOS semiconductor technology using soluble ZnO nanoparticles. We demonstrate solution-processed transistors with mobility > 0.1 cm2/V·s, which is the highest solution-processed NMOS mobility reported to date. The air-stability and transparency make this device an ideal candidate for low-cost printed displays and CMOS circuitry.
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; nanoelectronics; nanoparticles; semiconductor device manufacture; zinc compounds; CMOS integrated circuits; NMOS mobility; NMOS semiconductor technology; ZnO; ZnO nanoparticles; air-stability; printable n-type semiconductor technology; printed displays; solution-processed transistors; Brightness; Circuits; Costs; Displays; MOS devices; Nanoparticles; Optical films; Optical materials; Semiconductor materials; Zinc oxide;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419287
