Single-grain TFTs on location-controlled crystal grains formed by excimer laser crystallization of Si thin films

Single-grain Si thin-film transistors with no grain boundary in the channel are fabricated on location-controlled crystal grains formed by excimer-laser crystallization of Si thin films. Both of the n-channel and p-channel single-grain TFTs exhibit superior performance and single-crystal-like characteristics, compared to those over conventional random poly-Si TFTs fabricated by solid-phase crystallization or melting-crystallization on the same substrate, and by the same device process and configuration.