A novel methodology for extracting effective density-of-states in poly-Si thin-film transistors

Author

Lin, H.C. ; Yeh, K.-L. ; Lee, M.-H. ; Su, Yu-Chuan ; Huang, T.Y. ; Shen, S.-W. ; Lin, H.-Y.

Author_Institution

Inst. of Electron., National Chiao Tung Univ., Hsinchu, Taiwan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

781

Lastpage

784

Abstract

A novel methodology that greatly simplifies the procedure of extracting the effective density-of-states (DOS) in polycrystalline-Si thin-film transistors (poly-Si TFTs) is proposed and demonstrated. The characterization is performed on a Schottky barrier (SB) TFT with electrical source/drain extensions induced by a field-plate. Only one single device and two simple subthreshold I-V measurements at room temperature are needed for full band-gap DOS extraction. Impacts of different process treatments are clearly resolved using this methodology.

Keywords

Schottky barriers; electronic density of states; elemental semiconductors; semiconductor device measurement; silicon; thin film transistors; Schottky barrier TFT; effective density-of-states; electrical source/drain extensions; field-plate; full band-gap DOS extraction; poly-Si TFT; polycrystalline-Si thin-film transistors; process treatments; subthreshold I-V measurements; Grain boundaries; Laboratories; Passivation; Performance evaluation; Photonic band gap; Product development; Temperature measurement; Thin film transistors; Virtual manufacturing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419290

Filename

1419290