DocumentCode :
3003841
Title :
Analytical photo leak current model of low-temperature CW laser lateral crystallization (CLC) poly-Si TFTs
Author :
Suzuki, Kunihiro ; Takeuchi, Fumiyo ; Ebiko, Yoshiki ; Chida, Mitsuru ; Sasaki, Nobuo
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
785
Lastpage :
788
Abstract :
We found that the absorption of backlight by TFTs is insensitive to poly-Si thickness tSi, while photo leak current of TFTs depends linearly on tSi. We modeled these phenomena by assuming that the Q electron-hole pairs generated recombine at both interfaces of poly-Si. According to this model the photo leak current depends linearly on tSi and Q is independent of tSi. Our model also explained that the accumulation of hole charges degrades the subthreshold swing by increasing the channel potential increase.
Keywords :
crystallisation; elemental semiconductors; laser materials processing; leakage currents; semiconductor device models; silicon; thin film transistors; Si; backlight absorption; channel potential; electron-hole pairs; hole charges accumulation; low-temperature CW laser lateral crystallization; photo leak current model; poly-Si TFT; poly-Si thickness; subthreshold swing; thin film transistors; Absorption; Charge carrier processes; Crystallization; Degradation; Laboratories; Laser modes; Spontaneous emission; Substrates; Subthreshold current; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419291
Filename :
1419291
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3003841
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