Analytical photo leak current model of low-temperature CW laser lateral crystallization (CLC) poly-Si TFTs

Author

Suzuki, Kunihiro ; Takeuchi, Fumiyo ; Ebiko, Yoshiki ; Chida, Mitsuru ; Sasaki, Nobuo

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

785

Lastpage

788

Abstract

We found that the absorption of backlight by TFTs is insensitive to poly-Si thickness t_Si, while photo leak current of TFTs depends linearly on t_Si. We modeled these phenomena by assuming that the Q electron-hole pairs generated recombine at both interfaces of poly-Si. According to this model the photo leak current depends linearly on t_Si and Q is independent of t_Si. Our model also explained that the accumulation of hole charges degrades the subthreshold swing by increasing the channel potential increase.

Keywords

crystallisation; elemental semiconductors; laser materials processing; leakage currents; semiconductor device models; silicon; thin film transistors; Si; backlight absorption; channel potential; electron-hole pairs; hole charges accumulation; low-temperature CW laser lateral crystallization; photo leak current model; poly-Si TFT; poly-Si thickness; subthreshold swing; thin film transistors; Absorption; Charge carrier processes; Crystallization; Degradation; Laboratories; Laser modes; Spontaneous emission; Substrates; Subthreshold current; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419291

Filename

1419291