Title :
Impact of transistor-to-grain size statistics on large-grain polysilicon TFT characteristics
Author :
Cheng, C.F. ; Poon, M.C. ; Kok, C.W. ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
A model based on grain-boundary distribution to predict the impact of transistor-to-grain size statistics on transistor performance variation is proposed and extensively verified by experimental data. Using the model, optimization of transistor dimension with respect to grain size to achieve high mobility and low transistor-to-transistor variation to enhance the yield can be performed.
Keywords :
carrier mobility; crystal growth; crystallisation; elemental semiconductors; grain boundaries; grain size; semiconductor device models; silicon; thin film transistors; carrier mobility; grain-boundary distribution; large-grain polysilicon TFT characteristics; thin film transistors; transistor dimension; transistor performance variation; transistor-to-grain size statistics; transistor-to-transistor variation; Crystallization; Degradation; Electronic mail; Grain boundaries; Grain size; Predictive models; Solid modeling; Statistical distributions; Statistics; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419292
