DocumentCode :
3003943
Title :
A new dynamic load-line measurement method with EOS and load-pull system for power FET design
Author :
Takahashi, H. ; Kanamori, M.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Shiga, Japan
Volume :
4
fYear :
1999
fDate :
13-19 June 1999
Firstpage :
1651
Abstract :
We have developed a new dynamic load-line measurement method with EOS (electro-optic sampling) and load-pull systems, and demonstrated the accuracy of this measurement method using a MESFET under large signal operation (Wg=1.2 mm, f=2 GHz). This method is highly suitable for the design and verification of matching circuits for power FET´s and MMIC´s.
Keywords :
UHF field effect transistors; UHF measurement; power MESFET; semiconductor device measurement; signal sampling; 1.2 mm; 2 GHz; EOS; MESFET; dynamic load-line measurement method; electro-optic sampling; large signal operation; load-pull system; matching circuits; power FET design; Distortion measurement; Earth Observing System; Electrodes; Impedance; Microwave FETs; Power measurement; Radio frequency; Semiconductor device measurement; Signal design; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
Type :
conf
DOI :
10.1109/MWSYM.1999.780287
Filename :
780287
Link To Document :
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