Title :
350V/150A AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
Author :
Hikita, Masahiro ; Yanagihara, Manabu ; Nakazawa, Kazushi ; Ueno, Hiroaki ; Hirose, Yutaka ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Tanaka, Tsuyoshi ; Ueda, Daisuke ; Egawa, Takashi
Author_Institution :
Semicond. Device Res. Center, Matsushita Electr. Ind. Co., Ltd., Kyoto, Japan
Abstract :
We present a high power AlGaN/GaN HFET fabricated on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low specific on-state resistance of 1.9 mΩ·cm2 and a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching tr of 98 psec and tf of 96 psec, with a current density as high as 2.0 kA/cm2 is demonstrated for the first time.
Keywords :
III-V semiconductors; aluminium compounds; current density; elemental semiconductors; gallium compounds; power field effect transistors; semiconductor device breakdown; silicon; wide band gap semiconductors; 150 A; 350 V; 96 psec; 98 psec; AlGaN-GaN; Si; conductive Si substrate; current density; current handling capability; high power HFET; off-state breakdown voltage; semiconductor device fabrication; silicon substrate; source-via grounding structure; specific on-state resistance; sub-nano second switching; Buffer layers; Current density; Gallium nitride; Grounding; HEMTs; Heterojunctions; MODFETs; Semiconductor devices; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419297
