Title :
GaN double heterojunction field effect transistor for microwave and millimeterwave power applications
Author :
Micovic, Miroslav ; Hashimoto, Paul ; Hu, Ming ; Milosavljevic, Ivan ; Duvall, Janna ; Willadsen, Peter J. ; Wong, W.-S. ; Conway, Adam M. ; Kurdoghlian, Ara ; Deelman, Peter W. ; Moon, Jeong-S ; Schmitz, Adele ; Delaney, Michael J.
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
Abstract :
We report development of a novel AlGaN/GaN/AlGaN double heterojunction field effect tansistor (DHFET) with improved device performance over the conventional single heterojunction GaN FET (SHFET). The GaN DHFETs with low Al content Al0.04Ga0.96N buffer layer exhibit three orders of magnitude lower subthreshold drain leakage current and almost three orders of magnitude higher buffer isolation than corresponding SHFET devices (600 MΩ/sq. vs. 1 MΩ/sq.). In GaN DHFET´s with 0.15 μm conventional T-gates we observed 30% improvement in saturated power density and 10% improvement in PAE at 10 GHz over a corresponding SHFET device.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; leakage currents; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power field effect transistors; wide band gap semiconductors; 0.15 micron; 10 GHz; AlGaN-GaN-AlGaN; DHFET; SHFET; T-gates; buffer isolation; buffer layer; double heterojunction field effect transistor; microwave power applications; millimeterwave power applications; saturated power density; semiconductor device performance; single heterojunction FET; subthreshold drain leakage current; Artificial intelligence; Buffer layers; DH-HEMTs; Electrons; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Microwave FETs; Optical polarization;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419298
