A slow-trap model for the kink effect on InAlAs/InP HFET

Author

Georgescu, B. ; Souifi, A. ; Post, G. ; Guillot, G.

Author_Institution

Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees, Villeurbanne, France

fYear

1997

fDate

11-15 May 1997

Firstpage

173

Lastpage

176

Abstract

The kink effect in InAlAs/InP HFETs was examined in temperature and frequency dependent measurements. A slow states mechanism is found to be probably responsible for the increase of the drain-source conductance related to the kink effect. A deep-level with activation energy of 0.53 eV was deduced from drain conductance dispersion measurements. This level, with a slow emission rate at room temperature, seems to be associated with the kink effect

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; deep levels; electric admittance; electron traps; field effect transistors; indium compounds; I-V characteristics; InAlAs-InP; InAlAs/InP HFET; InP; bias-sweep measurements; deep-level; drain conductance dispersion; drain-source conductance; frequency dependent measurements; kink effect; slow states mechanism; slow-trap model; temperature dependent measurements; Frequency; HEMTs; Impact ionization; Indium compounds; Indium phosphide; Leakage current; MODFETs; Optical modulation; Substrates; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600082

Filename

600082