Title :
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity
Author :
Liu, Jie ; Zhou, Yugang ; Chu, Rongming ; Cai, Yong ; Chen, Kevin J. ; Lau, Kei May
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
We report an Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMT with enhanced linearity. Through channel engineering, i.e. inserting a 6-nm thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 μm × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. Driven by W-CDMA signals with a center frequency of 2 GHz, an adjacent channel leakage ratio (ACLR) of less than -45 dBc was achieved with a power added efficiency (PAE) of 45% and a power density of 3.4 W/mm for composite-channel HEMTs (CC-HEMTs) grown on sapphire substrates, without using any linearization techniques.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; linearisation techniques; power amplifiers; power field effect transistors; wide band gap semiconductors; 2 GHz; 6 nm; Al0.3Ga0.7N-Al0.05Ga0.95N-GaN; W-CDMA signals; adjacent channel leakage ratio; channel engineering; composite-channel HEMT; cutoff frequencies; high-current operating level; linear power amplifiers; linearization technique; low-current operating level; power added efficiency; power density; sapphire substrates; transconductance; Aluminum gallium nitride; Artificial intelligence; Capacitance-voltage characteristics; Gallium nitride; HEMTs; Linearity; MODFETs; Ohmic contacts; Plasma applications; Plasma devices;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419299
