DocumentCode
3004126
Title
Interface engineering for enhanced electron mobilities in W/HfO2 gate stacks
Author
Callegari, A. ; Jamison, P. ; Carrier, Erin ; Zafar, S. ; Gusev, E. ; Narayanan, V. ; D´Emic, C. ; Lacey, D. ; Feely, F.M. ; Jammy, R. ; Gribelyuk, M. ; Shepard, J. ; Andreoni, W. ; Curioni, A. ; Pignedoli, C.
Author_Institution
IBM Semicond. R&D Center, New York, NY, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
825
Lastpage
828
Abstract
Electron mobilities of W/HfO2 stacks were found to increase monotonically with annealing temperature with little (peak) or no degradation (1 MV/cm) when compared to poly-Si devices using conventional oxides. For stacks annealed at high temperature charge pumping curves indicate low interface states densities of ∼5 × 1010 charges/cm2. Mobility enhancement can also be attributed to a structural change in the HfO2 gate stack rather than due to only interfacial layer re-growth.
Keywords
annealing; dielectric devices; electron mobility; hafnium compounds; insulated gate field effect transistors; interface states; semiconductor device breakdown; tungsten; W-HfO2; W/HfO2 gate stacks; annealing temperature; electron mobilities; gate stack; high temperature charge pumping curves; interface engineering; interface states densities; interfacial layer re-growth; mobility enhancement; poly-Si devices; Annealing; CMOS technology; Charge pumps; Degradation; Electron mobility; Hafnium oxide; High-K gate dielectrics; Interface states; Scattering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419304
Filename
1419304
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