Title :
Impact of oxygen vacancies on high-κ gate stack engineering
Author :
Takeuchi, Hideki ; Wong, Hiu Yung ; Ha, Daewon ; King, Tsu-Jae
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The impact of oxygen vacancies in Hf-based gate dielectrics is discussed. Generation of oxygen vacancies in HfO2 is thermodynamically driven and causes Si interfacial layer formation and gate Fermi-level pinning in MOS devices. Hence, it is necessary to prevent oxygen transport across both top and bottom gate-dielectric interfaces through careful design of material system and thermal processing steps.
Keywords :
Fermi level; MIS devices; dielectric devices; hafnium compounds; interface states; oxygen; silicon; vacancies (crystal); Hf-based gate dielectrics; HfO2; MOS devices; O; Si; Si interfacial layer formation; bottom gate-dielectric interfaces; gate Fermi-level pinning; high-κ gate stack engineering; oxygen transport; oxygen vacancies; semiconductor device design; thermal processing; top gate-dielectric interfaces; Absorption; Annealing; Dielectric materials; Electron traps; Energy states; Hafnium; High K dielectric materials; MOS devices; Oxidation; Oxygen;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419305
