Title :
Passive, coplanar V-band HEMT mixer
Author :
Schefer, M. ; Lott, U. ; Patrick, W. ; Meier, Hp. ; Bachtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Zurich, Switzerland
Abstract :
A passive V-band mixer is presented which uses an InP HEMT for mixing. The measured minimum conversion loss is 10.3 dB (RF 61 GHz, LO 60 GHz) with an LO power of 6 dBm. The circuit was fabricated in coplanar technology
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; coplanar waveguides; field effect MIMIC; indium compounds; integrated circuit measurement; millimetre wave frequency convertors; millimetre wave mixers; 10.3 dB; 60 GHz; 61 GHz; GaInAs-AlInAs-InP; InP; InP HEMT; LO power; coplanar technology; down-converter measurements; inherent RF to LO isolation; minimum conversion loss; monolithically integrated mixer; passive coplanar V-band mixer; small-signal equivalent circuit; unconditional stability; Dielectric thin films; Equivalent circuits; Frequency; HEMTs; Indium phosphide; Metallization; Resistors; Sheet materials; Voltage; Wireless LAN;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600083
