A robust alternative for the DRAM capacitor of 50 nm generation

Author

Lee, Kwang Hee ; Chung, Suk-Jin ; Kim, Jin Yong ; Kim, Ki-Chul ; Lim, Jae-Soon ; Cho, Kyuho ; Lee, Jinil ; Chung, Jeong-Hee ; Lim, HanJin ; Choi, KyungIn ; Han, Sungho ; Jang, Soolk ; Nam, Byeong-Yun ; Yoo, Cha-Young ; Kim, Sung-Tae ; Chung, U-in ; Moon,

Author_Institution

Semicond. R&D Div., Samsung Electron. Co., Ltd., Yongin, South Korea

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

841

Lastpage

844

Abstract

As a new alternative for the DRAM capacitor of 50 nm generation, Ru/Insulator/TiN (RIT) capacitor with the lowest Toxeq of 0.85 nm has been successfully developed for the first time. TiO₂/HfO₂ and Ta₂O₅/HfO₂ double-layers were used as dielectric materials. After full integration into 512 Mbits DRAM device, the RIT capacitor showed good electrical properties and thermal stability up to 550°C and its time-dependent-dielectric-breakdown behavior sufficiently satisfied 10-year lifetime within a DRAM operation voltage.

Keywords

DRAM chips; MIS capacitors; electric breakdown; hafnium compounds; ruthenium; titanium compounds; 50 nm; 512 Mbits; 550 C; DRAM capacitor; DRAM device; DRAM operation voltage; RIT capacitor; Ru-TiN; Ta₂O₅-HfO₂; TiO₂-HfO₂; dielectric materials; electrical property; thermal stability; time-dependent-dielectric-breakdown behavior; Capacitors; Dielectric materials; Electrodes; High-K gate dielectrics; Leakage current; Random access memory; Robustness; Thermal stability; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419308

Filename

1419308