Author :
Henson, K. ; Lander, Robert J P ; Demand, M. ; Dachs, C.J.J. ; Kaczer, B. ; Deweerd, W. ; Schram, T. ; Tokei, Z. ; Hooker, J.C. ; Cubaynes, F.N. ; Beckx, S. ; Boullart, W. ; Coenegrachts, B. ; Vertommen, J. ; Richard, O. ; Bender, H. ; Vandervorst, W. ; K
Abstract :
We demonstrate for the first time that nMOS devices with PVD TaN gate on 1.2 nm EOT SiON can be fabricated with high drive currents. On state currents of 1150 μA/μm (Ioff < 10 nA/μm) at 1.2 V and 810 μA/μm (Ioff < 10 nA/μm) at 1.0 V are among the highest ever reported. The TaN metal gate electrode allows the capacitance equivalent thickness (CET or Tox-inv) to be scaled by 0.4 nm without increasing the gate leakage. A special metal etch stopping on 1.4 nm EOT SiON has been developed resulting in gate stacks of similar reliability as poly gate electrodes. We also report on an implant into the metal gate electrode that reduces gate leakage and increases mobility.
Keywords :
MOS integrated circuits; MOSFET; carrier mobility; silicon compounds; tantalum compounds; 1.0 V; 1.2 V; 45 nm; SiON; TaN; TaN metal gate electrode; capacitance equivalent thickness; carrier mobility; gate leakage; gate stacks; high drive currents; metal etch stopping; nMOS devices; nMOSFET; poly gate electrodes; state currents; thin SiON; Atherosclerosis; Dielectrics; Electrodes; Etching; Gate leakage; Implants; MOSFET circuits; Plasma applications; Plasma temperature; Silicon;
