DocumentCode
3004289
Title
High Uniformity, Stability, and Reliability Large-Format InGaAs APD Arrays
Author
Wu, X. ; Gu, Y. ; Yan, F. ; Choa, F.S. ; Shu, P.
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
The characteristics of both etched mesa and guard ring type of InGaAs APD arrays were compared. High uniformity, high stability, and high reliability guard-ring type of arrays with a size up to 64times64 were fabricated.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical arrays; photodetectors; photon counting; semiconductor device reliability; InGaAs; InGaAs APD arrays; avalanche photodiode arrays; etched mesa; guard ring type arrays; high uniformity arrays; photon counting; reliability; stability; Artificial satellites; Indium gallium arsenide; Leakage current; Lenses; Military satellites; Optical arrays; Optical sensors; Sensor arrays; Stability; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452558
Filename
4452558
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