Title :
Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETs
Author :
Veloso, A. ; Anil, K.G. ; Witters, L. ; Brus, S. ; Kubicek, S. ; De Marneffe, J.F. ; Sijmus, B. ; Devriendt, K. ; Lauwers, A. ; Kauerauf, T. ; Jurczak, M. ; Biesemans, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this work, we report an extensive characterisation of fully silicided gate (FUSI) devices with oxynitride (SiON) and Hf-silicate gate dielectrics. Enhanced drive current is obtained, in comparison with poly gate devices, together with an increase in electron/hole mobility and reduction in CET values. We show that the work function (WF) can be engineered by doping of the poly gates prior to FUSI for SiON devices but not for Hf-silicate devices. With reference to the poly gate, Hf-silicate/FUSI devices exhibit improved TDDB reliability behavior, having higher acceleration factor (γ) values. NBTI gives a maximum operating voltage above 1.2 V for ΔVT = 10% or 30 mV, as extrapolated for a 10 years-lifetime.
Keywords :
MOSFET; electron mobility; hole mobility; semiconductor device metallisation; semiconductor device reliability; work function; CET values reduction; FUSI device; Hf-silicate based MOSFET; Hf-silicate device; Hf-silicate gate dielectrics; SiON; SiON device; TDDB reliability behavior; acceleration factor; drive current; electron/hole mobility; fully silicided gate; operating voltage; oxynitride MOSFET; oxynitride gate dielectrics; poly gate device; work function engineering; Acceleration; Charge carrier processes; Dielectric devices; Doping; Electron mobility; MOSFETs; Niobium compounds; Reliability engineering; Titanium compounds; Voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419313