Impact of few electron phenomena on floating-gate memory reliability

Author

Molas, G. ; Deleruyelle, D. ; De Salvo, B. ; Ghibaudo, G. ; Gely, M. ; Jacob, S. ; Lafond, D. ; Deleonibus, S.

Author_Institution

CEA-LETI, Grenoble, France

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

877

Lastpage

880

Abstract

In this paper we give a quantitative evaluation of the intrinsic reliability limits of floating gate (FG) memories in the deca-nanometer range, due to the reduction of collective phenomena and to the dominance of single electron stochastic behaviours. A new model that quantitatively predicts the intrinsic dispersions of the memory retention time and programming window is proposed. Experimental results obtained on ultra-scaled memory devices (down to 30nm × 30nm), with either continuous poly-Si or Si-nanocrystal FG, are also presented. Finally, extrapolations on the intrinsic reliability limits of future generations of Flash memories are done.

Keywords

flash memories; reliability; Si-nanocrystal FG; collective phenomena reduction; continuous poly-Si FG; deca-nanometer range; electron phenomena; flash memories; floating-gate memory reliability; intrinsic dispersions; memory retention time; programming window; single electron stochastic behaviours; ultra-scaled memory device; Contamination; Extrapolation; Flash memory; Jacobian matrices; Nanocrystals; Nonvolatile memory; Predictive models; Silicon; Single electron memory; Stochastic processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419320

Filename

1419320