Impact of SiON on embedded nonvolatile MNOS memory

Author

Ishimaru, T. ; Matsuzaki, N. ; Okuyama, Y. ; Mine, T. ; Watanabe, K. ; Yugami, J. ; Kume, H. ; Ito, E. ; Kawashima, Y. ; Sakai, T. ; Kanamaru, Y. ; Ishii, Y. ; Mizuno, M. ; Kamohara, S. ; Hashimoto, T. ; Okuyama, K. ; Kuroda, K. ; Kubota, K.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo, Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

885

Lastpage

888

Abstract

We propose a new nonvolatile MNOS memory using SiON instead of SiN for embedded application, which has high performance and high reliability due to enhanced gate hole injection during erasure and better control of electron conduction in trapping materials during data retention. The increase in hole injection leads to fast and deep erase, which doubles the read-out current. Moreover, there is no erase degradation during program/erase cycling. The electron-conduction control significantly improves the data-retention characteristics, ensuring a 10-year retention lifetime at 180°C.

Keywords

MIS devices; electron traps; semiconductor device reliability; semiconductor storage; silicon compounds; 10 year; 180 C; SiN; SiON; data retention; electron conduction; electron-conduction control; erase degradation; gate hole injection; nonvolatile MNOS memory; program/erase cycling; read-out current; reliability; Charge carrier processes; Conducting materials; Degradation; Electron traps; Indium tin oxide; Laboratories; Materials reliability; Nonvolatile memory; Silicon compounds; Split gate flash memory cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419322

Filename

1419322