DocumentCode
3004558
Title
Light dependence of silicon FGCPW transmission lines
Author
Spiegel, S.J. ; Madjar, A.
Author_Institution
Electron. Syst. Div., RAFAEL, Haifa, Israel
Volume
4
fYear
1999
fDate
13-19 June 1999
Firstpage
1801
Abstract
The dependence of "finite ground CPW on silicon" properties on light illumination is presented. It is shown that the losses of FGCPW transmission lines increase with the illumination. By removing the passivation layer from the slot areas, the losses of FGCPWs are reduced. The strong dependence of the substrate conductivity on illumination suggests that FGCPWs can be used as devices with available loss and constant insertion phase.
Keywords
coplanar waveguides; dispersion (wave); elemental semiconductors; losses; passivation; silicon; waveguide attenuators; FGCPW transmission lines; Si; available loss; constant insertion phase; finite ground CPW; light illumination; passivation layer; slot areas; substrate conductivity; Conductors; Coplanar waveguides; Dielectric substrates; Frequency; Lighting; Passivation; Propagation losses; Silicon; Thermal conductivity; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.780322
Filename
780322
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