Characteristics of optically controlled oscillator using InP HEMT with novel structure

Author

Shiomi, I. ; Kawasaki, S. ; Matsugatani, K. ; Taguchi, T.

Author_Institution

Dept. of Commun. Eng., Tokai Univ., Kanagawa, Japan

Volume

4

fYear

1999

fDate

13-19 June 1999

Firstpage

1805

Abstract

This paper demonstrates the characteristics of the novel structure of photonic HEMT and the optical tuning characteristics of the MMIC oscillator using novel HEMT. The novel HEMT has an optical absorption layer to increase the photo-response. The fabricated oscillator consists of a InP HEMT and a CPW. The optical frequency shift of the InP MMIC oscillator using novel HEMT with 1.5 /spl mu/m optical source was 180 MHz around 37 GHz. It was found that enhancement of the optical tuning with the 1.5 /spl mu/m laser can be realized using a HEMT with novel structure.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC oscillators; circuit tuning; coplanar waveguides; field effect MIMIC; indium compounds; microwave photonics; millimetre wave oscillators; phototransistors; variable-frequency oscillators; 1.5 micrometre; 37 GHz; CPW; III-V semiconductors; InP; MMIC oscillator; optical absorption layer; optical frequency shift; optical tuning characteristics; optically controlled oscillator; photonic HEMT; Absorption; Coplanar waveguides; Frequency; HEMTs; Indium phosphide; Laser tuning; MMICs; Optical control; Optical tuning; Oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.780323

Filename

780323